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تفاصيل المنتج:
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| منطقة حساسة للضوء: | φ0.2 مم | طَرد: | معدن |
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| فئة الحزمة: | TO-18 | طول موجة حساسية الذروة (TYP.): | 800 نيوتن متر |
| إبراز: | low bias infrared Si APD,high speed infrared photoelectric sensor,infrared APD with high speed response |
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S12023-02 Low Bias Operation Infrared Si APD High Speed Response
Low bias operation, for 800 nm band
This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders.
Features
- Stable operation at low bias
- High-speed response
- High sensitivity and low noise
Specification:
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Spectral response range
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400 to 1000 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Dark current (max.) | 0.5 nA |
| Cutoff frequency (typ.) | 1000 MHz |
| Terminal capacitance (typ.) | 1 pF |
| Breakdown voltage (typ.) | 150 V |
| Temperature coefficient of breakdown voltage (typ.) | 0.65 V/℃ |
| Gain (typ.) | 100 |
اتصل شخص: Xu
الهاتف :: 86+13352990255
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